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Freescale Semiconductor Technical Data
Document Number: MRFG35003N6A Rev. 2, 6/2009
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications. * Typical Single - Carrier W - CDMA Performance: VDD = 6 Volts, IDQ = 180 mA, Pout = 450 mWatts Avg., 3550 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 10 dB Drain Efficiency -- 27% ACPR @ 5 MHz Offset -- - 42.5 dBc in 3.84 MHz Channel Bandwidth * 3 Watts P1dB @ 3550 MHz, CW Features * Excellent Phase Linearity and Group Delay Characteristics * High Gain, High Efficiency and High Linearity * RoHS Compliant * In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
MRFG35003N6AT1
3.5 GHz, 3 W, 6 V POWER FET GaAs PHEMT
CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage RF Input Power Storage Temperature Range Channel Temperature (1) Symbol VDSS VGS Pin Tstg Tch Value 8 -5 24 - 65 to +150 175 Unit Vdc Vdc dBm C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Symbol RJC Value (2) 5.9 Unit C/W
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 2 (Minimum) A (Minimum) IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C
1. For reliable operation, the operating channel temperature should not exceed 150C. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2007 - 2009. All rights reserved.
MRFG35003N6AT1 1
RF Device Data Freescale Semiconductor
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic Saturated Drain Current (VDS = 3.5 Vdc, VGS = 0 Vdc) Off State Leakage Current (VGS = - 0.4 Vdc, VDS = 0 Vdc) Off State Drain Current (VDS = 6 Vdc, VGS = - 2.2 Vdc) Off State Current (VDS = 20 Vdc, VGS = - 2.5 Vdc) Gate- Source Cut - off Voltage (VDS = 3.5 Vdc, IDS = 15 mA) Quiescent Gate Voltage (VDS = 6 Vdc, ID = 180 mA) Symbol IDSS IGSS IDSO IDSX VGS(th) VGS(Q) Min -- -- -- -- - 1.2 - 1.1 Typ 2.9 <1 50 <1 - 0.95 - 0.82 Max -- 100 1000 15 - 0.7 - 0.6 Unit Adc Adc Adc mAdc Vdc Vdc
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 6 Vdc, IDQ = 180 mA, Pout = 450 mWatts Avg., f = 3550 MHz, Single- Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Gps hD ACPR 8 22 -- 10 27 - 42.5 -- -- - 38 dB % dBc
Typical RF Performance (In Freescale Test Fixture, 50 hm system) VDD = 6 Vdc, IDQ = 180 mA, f = 3550 MHz Output Power, 1 dB Compression Point, CW P1dB -- 3 -- W
MRFG35003N6AT1 2 RF Device Data Freescale Semiconductor
VBIAS C11 C10 C9 C8 C15 C14 C13 C12
VSUPPLY
C7
C16
C6
C17
C5
C18
C4
C19
Z9 RF INPUT Z1 Z2 Z3 Z4 Z5 C3 C1 C2 Z6 R1 Z7 Z8 Z10 Z11
Z12
RF OUTPUT Z13 Z14 Z15 Z16 C20 C22 C21 Z17
Z1 Z2, Z4 Z3 Z5 Z6 Z7 Z8, Z10 Z9
0.045 x 0.753 Microstrip 0.045 x 0.025 Microstrip 0.020 x 0.360 Microstrip 0.045 x 0.075 Microstrip 0.045 x 0.055 Microstrip 0.300 x 0.125 Microstrip 0.146 x 0.070 Microstrip 0.025 x 0.485 Microstrip
Z11 Z12 Z13 Z14 Z15 Z16 Z17 PCB
0.300 x 0.215 Microstrip 0.025 x 0.497 Microstrip 0.025 x 0.322 Microstrip 0.025 x 0.270 Microstrip 0.025 x 0.083 Microstrip 0.045 x 0.050 Microstrip 0.045 x 0.467 Microstrip Rogers 4350, 0.020, r = 3.5
Figure 1. MRFG35003N6A Test Circuit Schematic Table 6. MRFG35003N6A Test Circuit Component Designations and Values
Part C1 C2 C3 C4, C19, C20 C5, C18 C6, C17 C7, C16 C8, C15 C9, C14 C10, C13 C11, C12 C21, C22 R1 Description 0.5 pF Chip Capacitor 0.4 pF Chip Capacitor 0.5 pF Chip Capacitor 6.8 pF Chip Capacitors 10 pF Chip Capacitors 100 pF Chip Capacitors 100 pF Chip Capacitors 1000 pF Chip Capacitors 0.01 F Chip Capacitors 39K pF Chip Capacitors 10 F, 50 V Chip Capacitors 0.7 pF Chip Capacitors 50 Chip Resistor Part Number 08051J0R5BBS 06035J0R4BBS 06035J0R5BBS 08051J6R8BBS ATC100A100JT150XT ATC100A101JT150XT ATC100B101JT500XT ATC100B102JT50XT ATC200B103KT50XT ATC200B393KT50XT GRM55DR61H106KA88B 08051J0R7BBS CRCW040250R0FKTA Manufacturer AVX AVX AVX AVX ATC ATC ATC ATC ATC ATC Murata AVX Vishay
MRFG35003N6AT1 RF Device Data Freescale Semiconductor 3
C10 C9
C14 C13
C11 C8 C7 C6 C5 C4 C3 R1 C20 C15 C16 C17 C18 C19
C12
C1
C2
C22
C21
MRFG350xxxx Rev. 6
Figure 2. MRFG35003N6A Test Circuit Component Layout
MRFG35003N6AT1 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
14 12 Gps, POWER GAIN (dB) 10 8 6 D 4 2 18 20 22 24 26 28 30 32 Pout, OUTPUT POWER (dBm) 10 0 VDD = 6 Vdc, IDQ = 180 mA, f = 3550 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) Gps 60 50 40 30 20 D, DRAIN EFFICIENCY (%) D, DRAIN EFFICIENCY (%) IRL, INPUT RETURN LOSS (dB)
Figure 3. Single - Channel W - CDMA Power Gain and Drain Efficiency versus Output Power
ACPR, ADJACENT CHANNEL POWER RATIO (dBc) 0 VDD = 6 Vdc, IDQ = 180 mA, f = 3550 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) -5
-10
-10
-20 IRL -30
-15
-20
-40 ACPR -50 18 20 22 24 26 28 30 32 Pout, OUTPUT POWER (dBm)
-25
-30
Figure 4. Single - Channel W - CDMA Adjacent Channel Power Ratio and IRL versus Output Power
14 12 Gps, POWER GAIN (dB) 10 Gps 8 6 D 4 2 3450 24 22 3650 28 26 VDD = 6 Vdc, IDQ = 180 mA, Pout = 450 mW Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) 34 32 30
3500
3550 f, FREQUENCY (MHz)
3600
Figure 5. Single - Channel W - CDMA Power Gain and Drain Efficiency versus Frequency NOTE: Data is generated from the test circuit shown. MRFG35003N6AT1 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
ACPR, ADJACENT CHANNEL POWER RATIO (dBc) 0 VDD = 6 Vdc, IDQ = 180 mA, Pout = 450 mW Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) 0 IRL, INPUT RETURN LOSS (dB) D, DRAIN EFFICIENCY (%) -5
-10
-20 IRL -30
-10
-15
-40 ACPR -50 3450 3500 3550 f, FREQUENCY (MHz) 3600
-20
-25 3650
Figure 6. Single - Channel W - CDMA Adjacent Channel Power Ratio and IRL versus Frequency
-5 EVM, ERROR VECTOR MAGNITUDE (dB) -10 -15 -20 -25 D -30 EVM -35 18 20 22 24 26 28 30 32 Pout, OUTPUT POWER (dBm) 0 10 VDD = 6 Vdc, IDQ = 180 mA, f = 3550 MHz Single-Carrier OFDM 802.16d, 64 QAM 3/4 7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF 60 50 40 30 20
Figure 7. Single - Channel OFDM Error Vector Magnitude and Drain Efficiency versus Output Power
NOTE: Data is generated from the test circuit shown.
MRFG35003N6AT1 6 RF Device Data Freescale Semiconductor
Table 7. Common Source S - Parameters (VDD = 6 Vdc, IDQ = 180 mA, TA = 25C, 50 Ohm System)
f MHz 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 2250 2300 2350 2400 2450 2500 2550 2600 2650 2700 2750 S11 |S11| 0.952 0.952 0.952 0.952 0.952 0.952 0.952 0.952 0.952 0.952 0.952 0.951 0.951 0.952 0.951 0.951 0.951 0.951 0.951 0.950 0.950 0.950 0.950 0.950 0.950 0.950 0.949 0.949 0.949 0.948 0.948 0.948 0.948 0.947 0.947 0.947 0.947 0.946 0.946 0.945 0.945 0.944 0.944 0.944 0.943 0.942 - 178.5 - 179.7 179.2 178.2 177.2 176.3 175.4 174.6 173.9 173.1 172.3 171.6 170.9 170.3 169.6 168.9 168.3 167.7 167.1 166.5 166.0 165.7 165.3 164.9 164.4 164.0 163.4 162.9 162.3 161.7 161.1 160.5 159.8 159.2 158.5 157.7 156.9 156.1 155.3 154.4 153.5 152.6 151.7 150.9 150.0 149.0 |S21| 3.658 3.336 3.062 2.832 2.627 2.451 2.304 2.175 2.062 1.955 1.857 1.769 1.696 1.631 1.567 1.508 1.453 1.403 1.360 1.319 1.308 1.267 1.226 1.189 1.154 1.123 1.093 1.065 1.039 1.014 0.991 0.970 0.950 0.931 0.914 0.897 0.883 0.869 0.857 0.845 0.835 0.825 0.816 0.808 0.800 0.793 S21 83.3 82.0 80.7 79.4 78.2 77.0 75.8 74.7 73.5 72.4 71.3 70.1 69.0 68.0 66.8 65.8 64.7 63.6 62.5 61.4 60.0 59.0 58.0 57.0 56.0 54.9 53.9 52.9 51.9 50.9 49.9 48.8 47.8 46.8 45.8 44.7 43.6 42.6 41.5 40.4 39.2 38.1 37.0 35.9 34.7 33.5 |S12| 0.017 0.017 0.017 0.018 0.018 0.018 0.018 0.018 0.018 0.018 0.018 0.018 0.018 0.018 0.018 0.018 0.018 0.018 0.019 0.019 0.019 0.019 0.019 0.019 0.019 0.019 0.019 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.021 0.021 0.021 0.021 0.021 0.022 0.022 0.022 0.022 0.023 S12 4.87 4.61 4.46 4.25 4.15 4.03 3.89 3.79 3.72 3.66 3.53 3.39 3.25 3.11 2.90 2.78 2.76 2.70 2.56 2.46 2.11 2.15 2.11 2.13 2.02 1.89 1.83 1.75 1.58 1.45 1.27 1.15 0.98 0.83 0.64 0.39 0.13 - 0.13 - 0.44 - 0.82 - 1.20 - 1.58 - 1.95 - 2.32 - 2.71 - 3.10 |S22| 0.844 0.845 0.845 0.845 0.845 0.844 0.844 0.845 0.845 0.845 0.845 0.845 0.845 0.845 0.845 0.845 0.844 0.844 0.843 0.843 0.839 0.839 0.840 0.840 0.841 0.841 0.842 0.842 0.842 0.841 0.841 0.842 0.841 0.841 0.841 0.841 0.839 0.839 0.838 0.838 0.836 0.835 0.833 0.832 0.831 0.830 S22 177.9 177.3 176.8 176.2 175.7 175.1 174.6 174.1 173.6 173.1 172.6 172.1 171.6 171.1 170.6 170.0 169.5 168.9 168.4 167.8 166.5 165.8 165.2 164.5 164.0 163.5 163.0 162.6 162.1 161.7 161.3 160.9 160.5 160.1 159.8 159.4 159.1 158.8 158.4 158.1 157.8 157.4 157.0 156.5 156.1 155.6 (continued)
MRFG35003N6AT1 RF Device Data Freescale Semiconductor 7
Table 7. Common Source S - Parameters (VDD = 6 Vdc, IDQ = 180 mA, TA = 25C, 50 Ohm System) (continued)
f MHz 2800 2850 2900 2950 3000 3050 3100 3150 3200 3250 3300 3350 3400 3450 3500 3550 3600 3650 3700 3750 3800 3850 3900 3950 4000 4050 4100 4150 4200 4250 4300 4350 4400 4450 4500 4550 4600 4650 4700 4750 4800 4850 4900 4950 5000 S11 |S11| 0.942 0.941 0.941 0.940 0.940 0.939 0.938 0.938 0.937 0.937 0.937 0.936 0.935 0.934 0.934 0.933 0.932 0.932 0.930 0.929 0.928 0.928 0.927 0.926 0.926 0.925 0.924 0.923 0.921 0.920 0.917 0.917 0.916 0.915 0.913 0.912 0.910 0.909 0.908 0.907 0.905 0.903 0.901 0.900 0.898 148.1 147.2 146.3 145.4 144.6 143.8 143.0 142.3 141.7 141.1 140.5 139.9 139.3 138.8 138.2 137.6 137.0 136.4 135.8 135.1 134.5 133.9 133.2 132.6 131.8 131.1 130.4 129.7 128.9 128.1 127.2 126.3 125.4 124.3 123.2 122.0 120.7 119.4 118.0 116.5 115.0 113.4 111.8 110.2 108.6 |S21| 0.787 0.780 0.775 0.770 0.766 0.761 0.757 0.752 0.748 0.745 0.740 0.736 0.732 0.728 0.723 0.720 0.716 0.712 0.708 0.704 0.700 0.696 0.693 0.690 0.687 0.684 0.681 0.679 0.677 0.676 0.675 0.674 0.673 0.673 0.673 0.673 0.674 0.675 0.676 0.679 0.681 0.684 0.686 0.689 0.692 S21 32.3 31.1 29.9 28.6 27.4 26.2 25.0 23.7 22.5 21.3 20.1 18.9 17.7 16.5 15.3 14.1 13.0 11.8 10.7 9.6 8.5 7.4 6.3 5.2 4.1 3.1 1.9 0.8 - 0.2 - 1.4 - 2.5 - 3.7 - 4.9 - 6.1 - 7.4 - 8.7 - 10.0 - 11.4 - 12.8 - 14.3 - 15.9 - 17.4 - 19.1 - 20.7 - 22.4 |S12| 0.023 0.023 0.023 0.024 0.024 0.024 0.025 0.025 0.025 0.026 0.026 0.027 0.027 0.027 0.028 0.028 0.028 0.028 0.029 0.029 0.029 0.029 0.030 0.030 0.030 0.030 0.031 0.031 0.031 0.032 0.032 0.033 0.034 0.034 0.035 0.035 0.036 0.037 0.038 0.038 0.039 0.040 0.041 0.042 0.042 S12 - 3.45 - 3.81 - 4.24 - 4.68 - 5.11 - 5.52 - 5.90 - 6.24 - 6.70 - 7.22 - 7.78 - 8.32 - 8.86 - 9.47 - 10.00 - 10.60 - 11.16 - 11.65 - 12.05 - 12.48 - 12.78 - 13.03 - 13.30 - 13.55 - 13.84 - 14.13 - 14.34 - 14.45 - 14.48 - 14.65 - 14.76 - 15.08 - 15.50 - 15.93 - 16.40 - 16.94 - 17.54 - 18.24 - 18.93 - 19.78 - 20.65 - 21.58 - 22.66 - 23.74 - 24.86 |S22| 0.828 0.826 0.824 0.822 0.821 0.819 0.818 0.816 0.814 0.813 0.813 0.811 0.810 0.809 0.808 0.807 0.807 0.807 0.807 0.806 0.806 0.805 0.804 0.804 0.802 0.801 0.799 0.798 0.797 0.797 0.796 0.795 0.792 0.791 0.788 0.786 0.783 0.780 0.777 0.773 0.771 0.768 0.765 0.762 0.757 S22 155.1 154.6 154.0 153.3 152.6 151.8 151.0 150.1 149.2 148.2 147.3 146.3 145.4 144.5 143.6 142.7 141.9 141.1 140.3 139.6 138.9 138.3 137.6 137.0 136.4 135.8 135.1 134.5 134.0 133.4 132.9 132.3 131.8 131.3 130.8 130.2 129.7 129.1 128.6 127.9 127.2 126.4 125.6 124.6 123.6
MRFG35003N6AT1 8 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
A F
3
0.146 3.71
0.095 2.41
0.115 2.92
B
D
1
2
R
L
0.115 2.92 0.020 0.51
4
N K Q
ZONE V
0.35 (0.89) X 45_" 5 _ 10_DRAFT
inches mm
SOLDER FOOTPRINT
DIM A B C D E F G H J K L N P Q R S U ZONE V ZONE W ZONE X INCHES MIN MAX 0.255 0.265 0.225 0.235 0.065 0.072 0.130 0.150 0.021 0.026 0.026 0.044 0.050 0.070 0.045 0.063 0.160 0.180 0.273 0.285 0.245 0.255 0.230 0.240 0.000 0.008 0.055 0.063 0.200 0.210 0.006 0.012 0.006 0.012 0.000 0.021 0.000 0.010 0.000 0.010 MILLIMETERS MIN MAX 6.48 6.73 5.72 5.97 1.65 1.83 3.30 3.81 0.53 0.66 0.66 1.12 1.27 1.78 1.14 1.60 4.06 4.57 6.93 7.24 6.22 6.48 5.84 6.10 0.00 0.20 1.40 1.60 5.08 5.33 0.15 0.31 0.15 0.31 0.00 0.53 0.00 0.25 0.00 0.25
U H
4
P C
Y
Y
E
ZONE W
G
RF Device Data Freescale Semiconductor
EEEE E EEEEEE EEE EEEEEE E EEEEEE E EEEEEE E
1 3 ZONE X
2
NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1984. 2. CONTROLLING DIMENSION: INCH 3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W, AND X. STYLE 1: PIN 1. 2. 3. 4. DRAIN GATE SOURCE SOURCE
S
VIEW Y - Y
CASE 466 - 03 ISSUE D PLD - 1.5 PLASTIC
MRFG35003N6AT1 9
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 1 2 Date July 2007 Nov. 2008 June 2009 * Initial Release of Data Sheet * Removed "Operating Case Temperature Range" from Maximum Ratings table so that the maximum channel temperature rating is the limiting thermal design criteria and not the case temperature range, p. 1 * Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing process as described in Product and Process Change Notification number, PCN13516, p. 1 Description
MRFG35003N6AT1 10 RF Device Data Freescale Semiconductor
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MRFG35003N6AT1
Document Number: RF Device Data MRFG35003N6A Rev. 2, 6/2009 Freescale Semiconductor
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